HN3G01J-GR ZG 的参数 |
| FET类型
Type |
JFET N-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-20V |
| 最大漏极电流Id
Drain Current |
|
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
|
| 跨导
Forward Transfer Admittance |
25ms@VDS=5V，VGS=0V，f=kHz |
| IDSS(Vgs=0V) |
6mA~12mA |
| 开启电压Vgs（th）/关断电压Vgs（off）
Gate-Source Threshold/Cut-off Voltage |
-2.5V |
| BJT 类型
Type |
NPN |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
150mA/0.15A |
| 截止频率fT
Transtion Frequency(fT) |
60MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
120~400 |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
EPITAXIAL TYPE TRANSISTOR High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
| 描述与应用 |
外延型晶体管 高频率放大器应用 AM高频放大器的应用 声频放大器的应用 |
| 技术文档PDF下载 |
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