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HN3B01F
 型号:  HN3B01F
 标记/丝印/代码/打字:  5A
 厂家:  TOSHIBA
 封装:  SOT-163/SM6/SOT-26
 批号:  05+
 库存数量:  0
 所属分类:  三极管Bipolar Junction Transistors(BJT)
  复合三极管Complex Bipolar Transistor
    NPN+PNP
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HN3B01F 5A 的参数

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 60V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V/-50V
集电极连续输出电流IC Collector Current(IC) 150mA/-150mA
截止频率fT Transtion Frequency(fT) 150MHz
直流电流增益hFE DC Current Gain(hFE) 120~400
管压降VCE(sat) Collector-Emitter Saturation Voltage 100mV/-100mV
耗散功率Pc Power Dissipation 300mW
Description & Applications Features ? TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Q1: ? High voltage and high current : VCEO = 50V, IC = 150mA (max) ? High hFE : hFE = 120~400 ? Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: ? High voltage and high current : VCEO = ?50V, IC = ?150mA (max) ? High hFE : hFE = 120~400 ? Excellent hFE linearity : hFE (IC = ?0.1mA) / hFE (IC = ?2mA) = 0.95 (typ.) ? Audio Frequency General Purpose Amplifier Applications
描述与应用 特点 ?东芝晶体管的硅NPN外延型(PCT工艺)硅PNP外延式(PCT的进程) Q1: ?高电压和高电流:VCEO=50V,IC =150mA(最小值) ?高HFE:HFE=120?400 ?优异的线性度:(IC=0.1毫安)/ HFE(IC=2毫安)=0.95(典型值) Q2: ?高电压和高电流:VCEO=-50V,IC=电流150mA(最大值) ?高HFE:HFE=120?400 ?优秀的HFE线性:HFE(IC=-0.1毫安的)/ HFE(IC=-2毫安,)= 0.95(典型值) ?音频通用放大器应用
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 相关型号列表

型号 标记/丝印/代码 厂家 批号 封装 数量 描述 详细资料
HN3B01F 5A TOSHIBA 05+ SOT-163/SM6/SOT-26 3000 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+PNP 查看
HN3B01F 5A TOSHIBA 05+ SOT-163/SM6/SOT-26 0 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+PNP 查看
HN3B02FU 5B TOSHIBA 05+NOPB2900 SOT-363/US6 3900 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-PNP+NPN 查看
HN3C01FU WA TOSHIBA 06NOPB SOT-363/US6 2700 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+NPN 查看
HN3C02F WB TOSHIBA 05+ SOT-163/SM6/SOT-26 6000 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+NPN 查看
HN3C06F WE TOSHIBA 05+ SOT-163/SM6/SOT-26 3000 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+NPN 查看
HN3C06F WE TOSHIBA 05+ SOT-163/SM6/SOT-26 200 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+NPN 查看
HN3C10F WL TOSHIBA 05+ SOT-163/SM6/SOT-26 0 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+NPN 查看
HN3C10F WL TOSHIBA 12+ROHS SOT-163/SM6/SOT-26 0 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+NPN 查看
HN3C12FT WN TOSHIBA 05+ SOT-363/US6 9000 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+NPN 查看
HN3C12FU WN TOSHIBA 05+ SOT-363/US6 1500 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+NPN 查看
HN3G01J-BL ZL TOSHIBA 08NOPB SOT-153/SMV/SOT-25 6623 场效应管FET-复合场效应管Complex FET-FET+BJT 查看
HN3G01J-GR ZG TOSHIBA 05+ SOT-153/SMV/SOT-25 0 场效应管FET-复合场效应管Complex FET-FET+BJT 查看
LQG10A3N3S00T1M05-01(LQG15HN3N3S00D) MURATA 05+ 0402-3N3 7000 电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer 查看
LQG11A39NJ00T1M05-01(LQG18HN39NJ00D) MURATA 05+ 0603-39NJ 6965 电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer 查看
LQG18HN3N3S00D MURATA 05+ 0603-3N3 0 电感Inductor/Coil/Choke-小功率电感Low Power Inductor-叠层Multilayer 查看
HN3C02F WB TOSHIBA 06NOPB SOT-163/SM6/SOT-26 2600 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+NPN 查看
HN3G01J-BL ZL TOSHIBA 08NOPB SOT-153/SMV/SOT-25 0 场效应管FET-复合场效应管Complex FET-FET+BJT 查看
HN3C01F WA TOSHIBA 06NOPB SOT-163/SM6/SOT-26 5500 三极管Bipolar Junction Transistors(BJT)-复合三极管Complex Bipolar Transistor-NPN+NPN 查看

 

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