GN01010NQTD 5AQ 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
6V |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-4V |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
15mA-30mA |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
|
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
GaAs MMICs.
GaAs N-Channel MES IC.
For high-output high-gain amplification.
Features
* General-use wide-band amplifier
* Low noise
* With bandwidth control pin |
| 描述与应用 |
砷化镓MMIC的。
N沟道MES砷化镓IC。
对于高输出高增益放大。
特点
*一般使用宽带放大器
*低噪音
*随着带宽控制引脚 |
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