FZT851TA FZT851 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
150V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
60V |
| 集电极连续输出电流IC
Collector Current(IC) |
6A |
| 截止频率fT
Transtion Frequency(fT) |
130MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~300 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
375mV/0.375V |
| 耗散功率Pc
Power Dissipation |
3W |
| Description & Applications |
SOT223 NPN SILICON PLANAR HIGH CURRENT(HIGH PERFORMANCE) TRANSISTORS Extremely low equivalent on-resistance; RCE(sat) =44m? at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps |
| 描述与应用 |
SOT223 NPN硅平面高电流（高性能）晶体管 极低的等效导通电阻;在5A时RCE（饱和）=44mΩ 6安培连续电流，高达20安培的峰值电流 极低的饱和电压 优秀HFE 高达10安培的特性 |
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