FZT696BTA FZT696 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
180V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
180V |
| 集电极连续输出电流IC
Collector Current(IC) |
500mA/0.5A |
| 截止频率fT
Transtion Frequency(fT) |
70MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
500 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
250mV/0.25V |
| 耗散功率Pc
Power Dissipation |
2W |
| Description & Applications |
SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Gain of 500 at IC=100mA Very low saturation voltage Darlington replacement Battery powered circuits |
| 描述与应用 |
SOT223 NPN硅平面中功率高增益晶体管 当IC=100MA时增益为500 非常低的饱和电压 ?达林顿更换 电池供电电路 |
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