FX503 503 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-3A |
| Q1基极输入电阻R1
Input Resistance(R1) |
150MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
140~400 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-350mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
2000mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? PNP Epitaxial Planar Silicon Transistor ? Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. ? The FX503 houses two chips, each being equivalent to the 2SB1202, in one package. ? Matched pair characteristics. |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?PNP外延平面硅晶体管 ?在一个封装中包含2个PNP晶体管，促进高密度安装 ?FX503房子两个芯片组成，每个相当于2SB1202，在一个封装中。 ?配对特性。 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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