FP103-TL 103 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-25V |
| 集电极连续输出电流IC
Collector Current(IC) |
-2A |
| Q1基极输入电阻R1
Input Resistance(R1) |
150MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
140~560 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-350mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
1300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? PNP Epitaxial Planar Silicon Transistor/Composite Schottky Barrier Diode ? Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting. ? The FP103 is formed with 2chips, one being equivalent to the 2SB1121 and the other the SB07-03C, placed in one package. ? DC-DC Converter Applications |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?PNP外延平面硅晶体管/复合肖特基二极管 ?复合型与PNP晶体管和肖特基势垒二极管中包含一个包，便于高密度安装。 ?FP103上形成有2个芯片，一个相当于2SB1121和SB07-03C，放置在一个包装。 ?DC-DC转换器应用 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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