FMMT717TA 717 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-12V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-12V |
| 集电极连续输出电流IC
Collector Current(IC) |
-2.5A |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
375 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-210mV/-0.21V |
| 耗散功率Pc
PoWer Dissipation |
625mW/0.625W |
| Description & Applications |
PNP SILICON POWER (SWITCHING) TRANSISTORS FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat) |
| 描述与应用 |
PNP硅平面高增益 中等功率晶体管 特点 非常低的等效导通电阻 |
| 技术文档PDF下载 |
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