FDV303N 303 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
25V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
8V |
| 最大漏极电流Id
Drain Current |
680mA/0.68A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.45Ω/Ohm 500mA,4.5V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.65-1.5V |
| 耗散功率Pd
Power Dissipation |
350mW/0.35W |
| Description & Applications |
Digital FET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Alternative to TN0200T and TN0201T. |
| 描述与应用 |
数字FET，N沟道 概述 这些N沟道增强型场效应晶体管 生产使用飞兆半导体专有的，高细胞密度，DMOS 技术。这非常高密度的过程是量身定做，以尽量减少 通态电阻低门极驱动条件。这个装置是 专为使用无论是在电池电路的应用 一个锂或三镉或NMH细胞。它可以被用来作为 逆变器或微型离散DC / DC高效率 紧凑的便携式电子设备，如蜂窝转换 手机和传呼机。该器件具有优异的导通状态 即使在栅极驱动电压低至2.5伏的阻力。 非常低的水平栅极驱动要求可直接 操作在3V电路。 VGS（TH）<1.5V。 门源齐纳ESD坚固。 >6kV人体模型 紧凑型工业标准SOT-23表面贴装封装。 替代到TN0200T TN0201T。 |
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