FDS9435A FDS9435A 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-25V |
| 最大漏极电流Id
Drain Current |
-5.3A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
80m?@ VGS = -4.5V, ID = -4A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-1~-3V |
| 耗散功率Pd
Power Dissipation |
2.5W |
| Description & Applications |
30V P-Channel Power Trench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced Power Trench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications ? Power management ? Load switch ? Battery protection Features ? Low gate charge ? Fast switching speed ? High performance trench technology for extremely low RDS(ON) ? High power and current handling capability |
| 描述与应用 |
30V P沟道功率沟槽MOSFET 概述 P沟道MOSFET是一种坚固的门版本飞兆半导体先进的功率沟槽过程。它已被优化需要给驱动器的额定电压（4.5V - 25V）的范围广泛的电源管理应用。 应用 ?电源管理 ?负荷开关 ?电池保护 特点 ?低栅极电荷 ?开关速度快 ?高性能沟道技术极低的RDS（ON） ?高功率和电流处理能力 |
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