FDG6306P 6 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-12V |
| 最大漏极电流Id
Drain Current |
-600mA/-0.6A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
630m?@ VGS = -2.5V, ID = -500mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.6~-1.5V |
| 耗散功率Pd
Power Dissipation |
300mW/0.3W |
| Description & Applications |
P-Channel 2.5V Specified Power Trench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications · Battery management · Load switch Features · Low gate charge · High performance trench technology for extremely low RDS(ON) · Compact industry standard SC70-6 surface mount package |
| 描述与应用 |
P沟道2.5V额定功率沟道MOSFET 概述 ???此P沟道2.5V指定MOSFET是一种坚固的门版本飞兆半导体先进的功率沟槽过程。它已被优化的电源管理应用广泛的栅极驱动电压（2.5V - 12V）。 应用 ·电池管理 ·负荷开关 特点 ·低栅极电荷 ·高性能沟槽技术非常低的RDS（ON） ·紧凑型工业标准SC70-6表面贴装封装 |
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