FDC6420C 420 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V/-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V/12V |
| 最大漏极电流Id
Drain Current |
3A/-2.2A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
95m?@ VGS = 2.5V, ID =2.5A/190m?@ VGS = -2.5V, ID = -1.8A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.5~1.5V/-0.6~-1.5V |
| 耗散功率Pd
Power Dissipation |
960mW/0.96W |
| Description & Applications |
20V N & P-Channel Power Trench MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications · DC/DC converter · Load switch · LCD display inverter Features · Low gate charge · High performance trench technology for extremely low RDS(ON). · Super SOT –6 package |
| 描述与应用 |
20V N＆P沟道功率沟道MOSFET 概述 ???这些N＆P沟道MOSFET的生产采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能。 ???这些设备已设计提供特殊功耗在一个非常小的空间更大更昂贵的SO-8和TSSOP-8封装的应用中是不切实际的。 应用 ·DC/ DC转换器 ·负荷开关 ·液晶显示器逆变器 特点 ·低栅极电荷 ·高性能沟道技术极低的RDS（ON）。 ·超级SOT-6包装 |
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