FDC6401N 401 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
3A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
95m?@ VGS = 2.5V, ID =2.5A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.5~1.5 |
| 耗散功率Pd
Power Dissipation |
960mW/0.96W |
| Description & Applications |
Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications · DC/DC converter · Battery Protection · Power Management Features · Low gate charge · High performance trench technology for extremely low RDS(ON) · High power and current handling capability |
| 描述与应用 |
双N沟道2.5V指定的PowerTrench MOSFET 概述 这双N沟道MOSFET已专门设计，以提高整体效率的DC / DC转换器采用同步或传统开关PWM控制器。它已被优化低栅极电荷，低RDS（ON）和快速开关速度。 应用 ·DC/ DC转换器 ·电池保护 ·电源管理 特点 ·低栅极电荷 ·高性能沟槽技术非常低的RDS（ON） ·高功率和电流处理能力 |
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