FDC2512 512 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
150V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
1.4A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
475m?@ VGS = 6V, ID = 1.3A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
2~4V |
| 耗散功率Pd
Power Dissipation |
1.6W |
| Description & Applications |
150V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications ? DC/DC converte Features ? 1.4 A, 150 V. RDS(ON) ? High performance trench technology for extremely low RDS(ON) ? Low gate charge (8nC typ) ? High power and current handling capability ? Fast switching speed |
| 描述与应用 |
150V N沟道功率沟槽MOSFET 概述 此N沟道MOSFET已专门设计，以提高整体效率的DC / DC转换器采用同步或传统开关PWM控制器。它已被优化低栅极电荷，低RDS（ON）和快速开关速度。 应用 ?DC/ DC转换器具 特点 ?1.4 A，150 V的RDS（ON） ?高性能沟道技术极低的RDS（ON） ?低栅极电荷（8NC典型值） ?高功率和电流处理能力 ?开关速度快 |
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