FC154 154 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
25V/-20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V/-15V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA/-50mA |
| 截止频率fT
Transtion Frequency(fT) |
3000MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
60~200/20~100 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
200mW |
| Description & Applications |
Features ? NPN/PNP Epitaxial Planar Silicon Transistor ? High-speed switching,high-frequency amp application ? Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. ? The FC154 is formed with two chips, being equivalent to the 2SA1699/2SC4270 placed in one package. |
| 描述与应用 |
特点 ?NPN / PNP平面外延硅晶体管 ?高速开关，高频放大器的应用 ?复合型中包含2个晶体管CP包装目前在使用，大大提高了安装效率。 ?FC154两个芯片组成，即相当于2SA1699/2SC4270放置在一个包装 |
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