FC104 104 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
55V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
150mA |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
160~600 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
80mV |
| 耗散功率Pc
Power Dissipation |
300mW |
| Description & Applications |
Features ? NPN Epitaxial Planar Silicon composite Transistors ? low-frequency general purpose amp. ? composite type with 2 transistors contained in the CP package currently in use,improving the mounting efficiency greatly ? the FC104 is formed with two chips,being equivalent to the 2SC4211,placed in one package |
| 描述与应用 |
特点 ?NPN平面外延硅复合晶体管 ?低频通用放大器。 ?复合型2个晶体管，在CP包装目前在使用，大大提高了安装效率 ?FC104两个芯片组成，相当于2SC4211，放置在一个包装 |
| 技术文档PDF下载 |
在线阅读  |
