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 三极管Bipolar Junction Transistors(BJT (2)
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EMY1
 型号:  EMY1
 标记/丝印/代码/打字:  Y1
 厂家:  ROHM
 封装:  SOT-553/EMT5
 批号:  05+NOPB7500
 库存数量:  24500
 所属分类:  三极管Bipolar Junction Transistors(BJT)
  复合三极管Complex Bipolar Transistor
    PNP+NPN
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EMY1 Y1 的参数

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) -60V/60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) -50V/50V
集电极连续输出电流IC Collector Current(IC) -150mA/150mA
截止频率fT Transtion Frequency(fT) 140MHz/180MHz
直流电流增益hFE DC Current Gain(hFE) 120~560
管压降VCE(sat) Collector-Emitter Saturation Voltage -500mV/400mV
耗散功率Pc Power Dissipation 150mW
Description & Applications Features ? Emitter common (dual transistors) ? Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package. ? PNP and NPN transistors have common emitters. ? Mounting cost and area can be cut in half.
描述与应用 特点 ?发射极普通的(双晶体管) ?在EMT或UMT或SMT封装包括一个2SA1037AK的2SC2412K晶体管。 ?PNP和NPN晶体管有共同的发射器。 ?安装成本和面积可减少一半。
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