EMF9 的参数 |
| FET类型
Type |
MOSFET N-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
100mA/0.1A |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
5?@ VGS = 4V, ID =10mA |
| 跨导
Forward Transfer Admittance |
20ms@VDS=3V，Id=10mA |
| IDSS(Vgs=0V) |
|
| 开启电压Vgs（th）/关断电压Vgs（off）
Gate-Source Threshold/Cut-off Voltage |
0.8~1.5V |
| BJT 类型
Type |
NPN |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流IC
Collector Current(IC) |
500mA/0.5A |
| 截止频率fT
Transtion Frequency(fT) |
320MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
270~680 |
| 耗散功率Pd
Power Dissipation |
300mW/0.3W |
| Description & Applications |
Power management (dual transistors) Application Power management circuit Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. |
| 描述与应用 |
电源管理（双晶体管） 应用 电源管理电路 特点 1）电源开关电路在单个封装中。 2）安装成本和面积可减少一半。 |
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