EMD12 D12 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
40V/-10V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/-100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
|
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
150mW/0.15W |
| Description & Applications |
Features ?Dual Common Base?Collector Bias Resistor Transistors ?Both the DTA144E and DTC144E in a EMT or UMT package. |
| 描述与应用 |
特点 ?双共基极 - 集电极偏置电阻晶体管 ?两个DTA144E一个EMT或UMT包的DTC144E |
| 技术文档PDF下载 |
在线阅读  |
