ECH8603-TL-E JC 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
| 最大漏极电流Id
Drain Current |
-4A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
87m?@ VGS = -2.5V, ID = -1A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.4~-1.3V |
| 耗散功率Pd
Power Dissipation |
1.3W |
| Description & Applications |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features ? Low ON-resistance. ? Ultrahigh-speed switching ? 2.5V drive. |
| 描述与应用 |
P-沟道硅MOSFET 通用开关设备应用 特点 ?低导通电阻。 ?超高速开关 ?2.5V驱动。 |
| 技术文档PDF下载 |
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