ECH8401 KA 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
10A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
19m?@ VGS = 2.5V, ID = 2A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.5~1.3V |
| 耗散功率Pd
Power Dissipation |
1.6W |
| Description & Applications |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features ? Low ON-resistance. ? Ultrahigh-speed switching. ? 2.5V drive. |
| 描述与应用 |
N-沟道硅MOSFET 超高速开关应用 特点 ?低导通电阻。 ?超高速开关。 ?2.5V驱动。 |
| 技术文档PDF下载 |
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