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DTC614TU
 型号:  DTC614TU
 标记/丝印/代码/打字:  R04
 厂家:  ROHM
 封装:  SOT-323/SC-70/UMT3
 批号:  05NOPB
 库存数量:  0
 所属分类:  三极管Bipolar Junction Transistors(BJT)
  带阻尼NPNNPN Bipolar Digital Transistor (BRT)
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DTC614TU R04 的参数

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 20V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 20V
集电极连续输出电流IC Collector Current(IC) 600mA/0.6A
基极输入电阻R1 Input Resistance(R1) 10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE) 820
截止频率fT Transtion Frequency(fT) 150MHz
耗散功率Pc Power Dissipation 0.2W/200mW
Description & Applications Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy 4) Low saturation voltage, typically Vce(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for muting circuits. 5) These transistors can be used at high current levels, IC=600mA
描述与应用 特性 1)内置启用偏置电阻器的逆变器电路无需连接外部输入电阻配置 2)偏置电阻组成的薄膜电阻完全隔离,允许负偏置输入。他们也有优势,几乎完全消除了寄生效应。 3)只有开/关条件需要设置操作,使装置的设计容易 4)低饱和电压,通常Vce(sat)=40mV@IC / IB=50mA/2.5mA,使得这些晶体管适合用于静音电路。 5)这些晶体管可用于高电流水平,IC=600毫安
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