CHDTC144EEPT WE 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
|
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
|
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
47KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
68 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
0.15W/150mW |
| Description & Applications |
Features ? Small surface mounting type ? High current gain ? Low collector-emitter saturation ? High saturation current capability ?Internal isolated NPN transistors in one package ?Built in bias resistor |
| 描述与应用 |
特性 ?小型表面贴装型 ?高电流增益 ?低集电极 - 发射极饱和 ?高饱和电流能力 ?内部隔离在一个封装的NPN晶体管 ?内置偏置电阻 |
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