DTB114GK L14 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-500mA/0.5A |
| 基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| 电阻比(R1/R2)
Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
56 |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc
Power Dissipation |
0.2W/200mW |
| Description & Applications |
Features ??500mA / ?50V Digital transistors (with built-in resistors) ?The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. ?Only the on / off conditions need to be set for operation, making the device design easy. ?Higher mounting densities can be achieved. Applications Inverter, Interface, Driver |
| 描述与应用 |
特点 ?500毫安/-50V数字晶体管（内置电阻） ?内置偏置电阻组成的薄膜电阻器完全隔离，??允许正偏压输入和寄生效应几乎完全淘汰。 ?只有开/关条件需要设置操作，使装置的设计容易。 ?高密度安装就可以实现。 应用 逆变器，接口，驱动程序 |
| 技术文档PDF下载 |
在线阅读  |
