DTB113EK F11 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-500mA/0.5A |
| 基极输入电阻R1
Input Resistance(R1) |
1KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
1KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
|
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc
Power Dissipation |
0.2W/200mW |
| Description & Applications |
Feature ?Digital transistors (built-in resistor) ?Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). ?The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. ?Only the on/off conditions need to be set for operation, making device design easy |
| 描述与应用 |
特点 ?数字晶体管（内置电阻） ?内置启用偏置电阻器的逆变器电路的配置，而无需连接外部输入电阻（见等效电路）。 ?偏置电阻组成的薄膜电阻完全隔离，允许输入的正偏压。他们也有优势，几乎完全消除了寄生效应。 ?只有开/关条件需要设置操作，使装置的设计容易 |
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