NTMD2P01R2 D2P01 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-16V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-10V |
| 最大漏极电流Id
Drain Current |
-2.3A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
150m?@ VGS = -2.5V, ID = -1.2A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.5~-1.5V |
| 耗散功率Pd
Power Dissipation |
710mW/0.71W |
| Description & Applications |
Power MOSFET Dual SOIC?8 Package Features ? High Efficiency Components in a Single SOIC?8 Package ? High Density Power MOSFET with Low RDS(on) ? Logic Level Gate Drive ? SOIC?8 Surface Mount Package,Mounting Information for SOIC?8 Package Provided ? Pb?Free Packages are Available Applications ? Power Management in Portable and Battery?Powered Products, i.e.:Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones |
| 描述与应用 |
功率MOSFET 双SOIC-8封装 特点 ?在一个单一的SOIC-8封装的高效率组件 ?高密度的功率MOSFET具有低RDS（ON） ?逻辑电平栅极驱动器 ?SOIC-8表面贴装封装，安装SOIC-8封装提供的信息 ?无铅包可用 应用 ?电源管理在便携式和电池供电产品，如：电脑，打印机，PCMCIA卡，蜂窝电话和无绳电话 |
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