CZT4033 CZT4033 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-80V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?80V |
| 集电极连续输出电流IC
Collector Current(IC) |
-1A |
| 截止频率fT
Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~300 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
?500mV/-0.5V |
| 耗散功率Pc
PoWer Dissipation |
2W |
| Description & Applications |
DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. |
| 描述与应用 |
产品描述： 中央政府半导体CZT4033型的PNP硅晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，为高电流的通用放大器应用设计制造。 |
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