CXT5551 CXT5551 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
180V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
160V |
| 集电极连续输出电流IC
Collector Current(IC) |
600mA/0.6A |
| 截止频率fT
Transtion Frequency(fT) |
100~300MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
80~250 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
200mV/0.2V |
| 耗散功率Pc
Power Dissipation |
1.2W |
| Description & Applications |
SURFACE MOUNT NPN SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. |
| 描述与应用 |
表面贴装 NPN硅晶体管 中央半导体CXT5551型硅NPN晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，高电压放大器应用设计制造。 |
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