CPH6415 KR 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
| 最大漏极电流Id
Drain Current |
4A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
120m?@ VGS = 1.8V, ID = 0.5A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4~1.3V |
| 耗散功率Pd
Power Dissipation |
1.6W |
| Description & Applications |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 1.8V drive. |
| 描述与应用 |
N-沟道硅MOSFET 通用开关设备应用 特点 ?·低导通电阻。 ?·超高速开关。 ?·1.8V驱动器。 |
| 技术文档PDF下载 |
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