buk107-50dl 10750 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
50V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
|
| 最大漏极电流Id
Drain Current |
3mA |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.2Ω/Ohm @100mA,5V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1.7V-3.7V |
| 耗散功率Pd
Power Dissipation |
1.8W |
| Description & Applications |
N-channel enhancement mode vertical D-MOS transistor Vertical power DMOS output stage Overload protected up to 85?C ambient Overload protection by current limiting and overtemperature sensing Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from input Low operating input current permits direct drive by micro-controller ESD protection on all pins Overvoltage clamping for turn off of inductive loads |
| 描述与应用 |
N沟道增强型垂直 D-MOS晶体管 垂直功率DMOS输出 舞台 超载保护 85?C环境 电流过载保护 限制和过热 传感 锁存过载保护 复位输入 5 V逻辑兼容输入电平 控制功率MOSFET 过载和供应 保护电路 来自输入 低工作输入电流 允许直接驱动 微控制器 所有引脚上的ESD保护 反过来过压钳位 关闭感性负载 |
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