BFR92ARGELBGS08 P5 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
30mA |
| 截止频率fT
Transtion Frequency(fT) |
6Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
65~150 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Silicon NPN Planar RF Transistor Features ? High power gain ? Low noise figure ? High transition frequency ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Wide band amplifier up to GHz range. |
| 描述与应用 |
硅NPN平面RF晶体管 特点 ??高功率增益 ??低噪声系数 ??高转换频率 ??无铅（Pb）组件 ??组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 宽频带放大器高达GHz范围内。 |
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