BFR30 M1P 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
25v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-25v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
4~10ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
|
| 耗散功率Pd
Power Dissipation |
250mW/0.25W |
| Description & Applications |
?N-channel silicon field-effect transistors DESCRIPTION Planar epitaxial symmetrical junction N-channel field-effect transistor in a plastic SOT23 package. APPLICATIONS Low level general purpose amplifiers in thick and thin-film circuits. |
| 描述与应用 |
?N沟道硅场效应晶体管说明 平面外延N沟道对称结 SOT23封装在一个塑料的场效应晶体管。 应用 低级别的通用放大器厚 薄膜电路。 |
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