BFR181 E6327 RFs 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流IC
Collector Current(IC) |
20mA |
| 截止频率fT
Transtion Frequency(fT) |
8Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
50~200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
175mW/0.175W |
| Description & Applications |
NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz |
| 描述与应用 |
NPN硅RF晶体管 低噪声，高增益宽带放大器集电极电流从0.5mA到12mA fT = 8 GHz F = 1.45 dB at 900 MHz |
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