BFQ67 v2 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
7.5Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
65~150 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
400mV/0.4V |
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
NPN Silicon Planar RF Transistor Features ? Small feedback capacitance ? Low noise figure ? High transition frequency ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. |
| 描述与应用 |
NPN硅平面RF晶体管 特点 ??小反馈电容 ??低噪声系数 ??高转换频率 ?? 无铅（Pb）组件 ??组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 低噪声小信号放大器高达2 GHz。这晶体管能在UHF，VHF和微波频率具有优越的噪声系数和相关增益性。 |
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