BFP520 AP 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
7.5V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
2.5V |
| 集电极连续输出电流IC
Collector Current(IC) |
40mA |
| 截止频率fT
Transtion Frequency(fT) |
45Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
70~200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
100mW/0.1W |
| Description & Applications |
NPN Silicon RF Transistor For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 20 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz Transition frequency fT = 45 GHz Gold metallization for high reliability SIEGET 45 - Line 45 GHz fT - Line |
| 描述与应用 |
NPN硅RF晶体管 对于最高增益低噪声放大器在1.8 GHz和2mA/2 V 杰出GMS= 20分贝 噪音系数F= 0.95分贝 对于振荡器高达15 GHz 过渡频率fT= 45 GHz的 镀金高可靠性 SIEGET45 - 线路 45 GHz的 FT - 线 |
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