BFP193 RC 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
12V |
| 集电极连续输出电流IC
Collector Current(IC) |
80mA |
| 截止频率fT
Transtion Frequency(fT) |
8Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
50~200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
580mW/0.58W |
| Description & Applications |
NPN Silicon RF Transistor For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers fT = 8 GHz F = 1.3 dB at 900 MHz |
| 描述与应用 |
NPN硅RF晶体管 低噪声，高增益放大器高达2 GHz 对于线性宽带放大器 FT =8 GHz的 F =1.3分贝(在900 MHz时) |
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