BF998R MRS 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
12V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
|
| 最大漏极电流Id
Drain Current |
30mA |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
2V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Silicon N-channel dual-gate MOS-FETs VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. FEATURES ? Short channel transistor with high forward transfer admittance to input capacitance ratio ? Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS ? VHF and UHF applications with 12 V supply voltage,such as television tuners and professional communications equipment. DESCRIPTION Depletion type field effect transistor in a plastic microminiature SOT143 or SOT143R package with source and substrate interconnected. The transistors are protected against excessive input voltage surges by integrated diodes between gates and source. |
| 描述与应用 |
硅N沟道双栅MOS场效应管 VHF和UHF的应用程序具有12伏电压的电源电压， 诸如电视调谐器和专业的通信设备。 特点 ?短沟道晶体管输入电容比具有较高的正向传输导纳 ?低噪声增益控制放大器高达1 GHz。 应用 ?VHF和UHF应用具有12伏电压的电源电压，如电视调谐器和专业的通信设备。 说明 耗尽型场效应晶体管在一个塑料超小型SOT143封装SOT143R相互连接的源和衬底。晶体管保护，以防止过高的输入电压浪涌门和源之间的集成二极管。 |
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