BF2030R NE 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
8V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
6V |
最大漏极电流Id
Drain Current |
10mA |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.3V |
耗散功率Pd
Power Dissipation |
200mW/0.2W |
Description & Applications |
Silicon N-Channel MOSFET Tetrode ? For low noise, high gain controlled input stages up to 1GHz ? Operating voltage 5V |
描述与应用 |
硅N沟道MOSFET四极管 ?低噪声,高增益控制 高达1GHz的输入阶段 ?工作电压5V |
技术文档PDF下载 |
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