BF1201WR LA 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
10V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
|
| 最大漏极电流Id
Drain Current |
30mA |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.3~1.2V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
N-channel dual-gate MOS-FETs VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment. FEATURES Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS VHF and UHF applications with 3V to9 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. |
| 描述与应用 |
N沟道双栅MOS场效应管 9伏的VHF和UHF的应用电源电压，如电视 调谐器和专业的通信设备 特点 短沟道晶体管高正向转移导纳输入电容比 低噪声增益控制放大器高达1 GHz 内部自偏置电路，以确保良好的交叉调制在AGC的性能和良好的直流稳定化。 应用 VHF和UHF与3V到9 V电源电压的应用，例如电视调谐器和专业的通信设备。 说明 增强型N沟道场效应晶体管相互连接的源和衬底。门和源之间的集成二极管防止过高的输入电压浪涌。 BF1201，BF1201R BF1201WR SOT143B SOT143R SOT343R塑料封装封装。 |
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