BF1100WR MF 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
14V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
13.2V |
| 最大漏极电流Id
Drain Current |
30mA |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.3~1V |
| 耗散功率Pd
Power Dissipation |
280mW/0.28W |
| Description & Applications |
Dual-gate MOS-FETs FEATURES ? Specially designed for use at 9 to 12 V supply voltage ? Short channel transistor with high forward transfer admittance to input capacitance ratio ? Low noise gain controlled amplifier up to 1 GHz ? Superior cross-modulation performance during AGC. APPLICATIONS ? VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. |
| 描述与应用 |
双栅MOS场效应管 特点 ?专为使用在9至12 V电源电压 ?短沟道晶体管输入电容比具有较高的正向传输导纳 ?低噪声增益控制放大器高达1 GHz ?高级交叉调制性能在AGC。 应用 ?VHF和UHF应用，如电视调谐器和专业的通信设备。 说明 增强型场效应晶体管在一个塑料的超小型SOT143或SOT143R包。该晶体管由MOS-FET源极和衬底的相互联系和内部偏置电路，以确保良好的交叉调制性能在AGC放大器。 |
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