BCR169 WS 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| 电阻比(R1/R2)
Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
100~600 |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 耗散功率Pc
Power Dissipation |
0.2W/200mW |
| Description & Applications |
Feature ? PNP Silicon Digital Transistor ? Switching circuit, inverter, interface circuit, driver circuit ? Built in bias resistor (R1 = 4.7k ?) ? For 6-PIN packages: two (galvanic) internalisolated transistors with good matching in one package |
| 描述与应用 |
特点 ?PNP硅数字晶体管 ?开关电路，逆变器，接口电路，驱动电路 ?内置偏置电阻（R1=4.7KΩ） ?对于6-PIN封装：2（电流）的内部具有良好的匹配隔离晶体管在一个封装中 |
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