BCR133S WC 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100MA/0.1A |
| Q1基极输入电阻R1
Input Resistance(R1) |
10KΩ |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
10KΩ |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
30 |
| 截止频率fT
Transtion Frequency(fT) |
130MHZ |
| 耗散功率Pc
Power Dissipation |
250MW/0.25W |
| Description & Applications |
* NPN Silicon Digital Transistor
* Switching in circuit, inverter, interface circuit, drive circuit
* Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ) |
| 描述与应用 |
* NPN硅数字晶体管
* 开关电路，逆变器，接口电路，驱动电路
* 内置偏置电阻（R1=10kΩ的，R2=10kΩ的） |
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