BCR116S WG 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
0.1 |
| Q2基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
0.1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
70 |
| 截止频率fT
Transtion Frequency(fT) |
150MHz |
| 耗散功率Pc
Power Dissipation |
250mW/0.25W |
| Description & Applications |
Features ?NPN Silicon Digital Transistor ?Switching circuit, inverter, interface circuit,driver circuit ?Built in bias resistor (R1=4.7k , R2=4.7k ) ?For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package |
| 描述与应用 |
特点 ?NPN硅数字晶体管 ?开关电路，逆变器，接口电路，驱动电路 ?内置偏置电阻（R1=4.7K，R2=4.7K） ?6-PIN封装：两个（电流）的内部隔离晶体管具有良好的匹配在一个封装中 |
| 技术文档PDF下载 |
在线阅读  |
