BC856S 5F 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-80V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-65V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
100MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
110 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-300mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
200mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? PNP general purpose double transistor ? Two transistors in one package ? Reduces number of components and board space ? No mutual interference between the transistors. APPLICATIONS ? General purpose switching and small signal amplification |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?PNP通用双晶体管 ?在一个封装中的两个晶体管 ?减少元件数量和电路板空间 ?晶体管之间没有相互干扰。 应用 ?通用开关和小信号放大 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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