BC847BPN 13 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
45V/-45V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/-100mA |
| 截止频率fT
Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
200~450 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
300mV |
| 耗散功率Pc
Power Dissipation |
200mW |
| Description & Applications |
Features ? NPN/PNP general purpose transistor ? Low collector capacitance ? Low collector-emitter saturation voltage ? Closely matched current gain ? Reduces number of components and boardspace ? No mutual interference between the transistors. APPLICATIONS ? General purpose switching and amplification. |
| 描述与应用 |
特点 ?NPN/ PNP通用晶体管 ?低集电极电容 ?低集电极 - 发射极饱和电压 ?紧密匹配的电流增益 ?组件和boardspace减少 ?晶体管之间没有相互干扰。 应用 ?通用开关和放大。 |
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