BAR81W BB 的参数 |
| 反向电压Vr
Reverse Voltage |
30V |
| 平均整流电流Io
Average Rectified Current |
100mA/0.1A |
| 最大正向压降VF
Forward Voltage(Vf) |
930mV/0.93V |
| 反向恢复时间Trr
Reverse Recovery Time |
80ns |
| 最大耗散功率Pd
Power Dissipation |
|
| Description & Applications |
FeAtures ?Silicon RF Switching Diode ?Designed for use in shunt configurAtion in high performAnce RF switches ?High shunt signAl isolAtion ?Low shunt insertion loss ?Optimized for short - open trAnsformAtion using lines |
| 描述与应用 |
特点 ?硅射频开关二极管 ?设计用于分流配置高性能RF开关 ?高并联信号隔离器 ?分流插入损耗低 ?优化短 - 开放转型线 |
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