2SK3376TK-BK 3B 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.17~0.3ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.15~-1v |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
?Field Effect Transistor Silicon N Channel Junction Type Application for Ultra-compact ECM |
| 描述与应用 |
?场效应晶体管的硅N沟道结型 超紧凑ECM应用 |
| 技术文档PDF下载 |
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