2SK2219-21 D21 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.14~0.24ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.2~1.2v |
| 耗散功率Pd
Power Dissipation |
100mW/0.1W |
| Description & Applications |
?N-Channel Junction Silicon FET ?Capacitor Microphone Applications ?applied sets to be made small and slim. ?Especially suited for use in audio, telephone capacitor microphones. ?Excellent voltage characteristic. ?Excellent transient characteristic. |
| 描述与应用 |
?N沟道结硅FET ?电容传声器的应用 ?应用集小型和超薄。 ?特别适合用于音响，电话电容麦克风。 ?优秀的电压特性。 ?出色的瞬态特性。 ?通过过程FBET。 |
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