2SK211-GR KG 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
18v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-18v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
5~10ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.4~-4v |
| 耗散功率Pd
Power Dissipation |
150mW/0.15W |
| Description & Applications |
?Silicon N Channel Junction Type ?FM Tuner Applications VHF Band Amplifier Applications ? Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) ? High forward transfer admitance: |Yfs| = 9 mS (typ.) ? Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.) |
| 描述与应用 |
?硅N沟道结型 ?FM调谐器应用 VHF频带放大器应用 ?低噪声系数：NF=2.5分贝“（典型值）（F =100兆赫） ?高正向传输admitance：| YFS|=9毫秒（典型值） ?极低的反向传输电容：CRSS=0.1 PF（典型值） |
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