2SK18600R2MC 1H R 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
20v |
| 栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-20v |
| 漏极电流(Vgs=0V)IDSS
Drain Current |
0.095~0.48ma |
| 关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-2~-5v |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
?Silicon N-Channel Junction FET ?For impedance conversion in low frequency For electret capacitor microphone Features ? High mutual conductance gm ? Low noise voltage of NV |
| 描述与应用 |
?硅N沟道结型场效应管 ?对于低频阻抗转换中 对于驻极体电容式麦克风 特点 ?高互导GM ?低噪声电压的NV |
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